000			01309nam a2200289 a 4500
001			000481155
003			AM-YeNLA
005			20190426125459.0
008			060323s2006 ne |||||r|||||000|0|eng|d
020			_a140204366X (PB)
020			_a1402043651 (HB)
020			_a1402043678 (e-book)
040			_aAM-YeHGA
041	0		_aeng
245	0	0	_aDefects in high-k gate dielectric stacks : _bNano-electronic semiconductor devices / _cEd. by Evgeni Gusev.
260			_aDordrecht, The Netherlands : _bSpringer, _c2006.
300			_ax, 492 p. : _bill.
440		0	_aNATO Science Series _nSeries II : _pMathematics, Physics and Chemistry _vVol. 220
500			_a"Proceedings of the NATO Advanced Research Workshop on Defects in High-k Dielectric Nano-electronic Semiconductor Devices, held July 11-14, 2005, in St. Petersburg, Russia." - Colophon.
504			_aIncludes bibliogr. references and indexes
650	1	4	_aGate array circuits _vCongresses
650	1	4	_aDielectrics _vCongresses
650	1	4	_aSemiconductors _xDefects _vCongresses
700	1		_aGusev, Evgeni _4edt
710	2		_aNorth Atlantic Treaty Organization _bScientific Affairs Division
711	2		_aNATO Advanced Research Workshop on Defects in High-k Dielectric Nano-electronic Semiconductor Devices _d( 2005 : _cSt. Petersburg, Russia)
999			_c413816 _d413816