Neutron Transmutation Doping in Semiconductors / (Գրառման հմ. 787434)

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000 -LEADER
fixed length control field	00656nam a2200181 a 4500
001 - CONTROL NUMBER
control field	000884494
005 - DATE AND TIME OF LATEST TRANSACTION
control field	20221210211647.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field	120414s1978 r 000 0 eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number	0-306-40155-X
041 0# - LANGUAGE CODE
Language code of text/sound track or separate title	eng
245 00 - TITLE STATEMENT
Title	Neutron Transmutation Doping in Semiconductors /
Statement of responsibility, etc.	Edt. by J.M. Meese.
260 ## - PUBLICATION, DISTRIBUTION, ETC.
Place of publication, distribution, etc.	New York ;
--	London :
Name of publisher, distributor, etc.	Plenum Press,
Date of publication, distribution, etc.	1978.
300 ## - PHYSICAL DESCRIPTION
Extent	371 p. :
Other physical details	fig., tables.
504 ## - BIBLIOGRAPHY, ETC. NOTE
Bibliography, etc. note	Includes Index.
650 14 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element	Semiconductors
700 ## - ADDED ENTRY--PERSONAL NAME
Personal name	Meese, J.M.
Relator code	edt
711 2# - ADDED ENTRY--MEETING NAME
Meeting name or jurisdiction name as entry element	Proceedings of the International Conference on Transmutation Doping in Semiconductors
Number of part/section/meeting	Held at the University of Missouri, Columbia, Missouri, 1978

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				Արտասահմանյան գրականության ընթերցասրահ	Engineering University Library	Engineering University Library	08/05/2017	621.38 N-50	EU0517055	08/05/2017	08/05/2017	Book	Three Hour Loan